Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF19N20

FQPF19N20

MOSFET N-CH 200V 11.8A TO220F

Fairchild Semiconductor
10,000 -

RFQ

FQPF19N20

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF1300N80ZYD

FCPF1300N80ZYD

MOSFET N-CH 800V 4A TO220F-3

Fairchild Semiconductor
1,550 -

RFQ

FCPF1300N80ZYD

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 4.5V @ 400µA 21 nC @ 10 V ±20V 880 pF @ 100 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF2250N80Z

FCPF2250N80Z

MOSFET N-CH 800V 2.6A TO220F

Fairchild Semiconductor
1,334 -

RFQ

FCPF2250N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 21.9W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF7N60YDTU

FCPF7N60YDTU

MOSFET N-CH 600V 7A TO220F-3

Fairchild Semiconductor
3,952 -

RFQ

FCPF7N60YDTU

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 920 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB8870

FDB8870

MOSFET N-CH 30V 23A/160A TO263AB

Fairchild Semiconductor
800 -

RFQ

FDB8870

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 160A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF2N80YDTU

FQPF2N80YDTU

MOSFET N-CH 800V 1.5A TO220F-3

Fairchild Semiconductor
725 -

RFQ

FQPF2N80YDTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 1.5A (Tc) 10V 6.3Ohm @ 750mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDI9409-F085

FDI9409-F085

FDI9409 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
1,600 -

RFQ

FDI9409-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2980 pF @ 25 V - 94W (Tj) -55°C ~ 175°C (TJ) Through Hole
FCI7N60

FCI7N60

MOSFET N-CH 600V 7A I2PAK

Fairchild Semiconductor
398 -

RFQ

FCI7N60

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 920 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI8N60CTU

FQI8N60CTU

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
6,000 -

RFQ

FQI8N60CTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI4N90TU

FQI4N90TU

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
1,502 -

RFQ

FQI4N90TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 4.2A (Tc) 10V 3.3Ohm @ 2.1A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75433S3ST

HUFA75433S3ST

64A, 60V, 0.016OHM, N-CHANNEL MO

Fairchild Semiconductor
520 -

RFQ

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 64A (Tc) 10V 16mOhm @ 64A, 10V 4V @ 250µA 117 nC @ 20 V ±20V 1550 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF8N80CYDTU

FQPF8N80CYDTU

MOSFET N-CH 800V 8A TO220F-3

Fairchild Semiconductor
417 -

RFQ

FQPF8N80CYDTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.55Ohm @ 4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2050 pF @ 25 V - 59W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP070AN06A0

FDP070AN06A0

MOSFET N-CH 60V 15A/80A TO220-3

Fairchild Semiconductor
1,261 -

RFQ

FDP070AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 3000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF260N65FL1

FCPF260N65FL1

MOSFET N-CH 650V 15A TO220F

Fairchild Semiconductor
3,523 -

RFQ

FCPF260N65FL1

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 260mOhm @ 7.5A, 10V 5V @ 1.5mA 60 nC @ 10 V ±20V 2340 pF @ 100 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF6N80T

FQPF6N80T

MOSFET N-CH 800V 3.3A TO220F

Fairchild Semiconductor
5,111 -

RFQ

FQPF6N80T

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.3A (Tc) 10V 1.95Ohm @ 1.65A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF8N90C

FQPF8N90C

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
5,346 -

RFQ

FQPF8N90C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF44N25TRDTU

FDPF44N25TRDTU

MOSFET N-CH 250V 44A TO220F

Fairchild Semiconductor
1,331 -

RFQ

FDPF44N25TRDTU

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 69mOhm @ 22A, 10V 5V @ 250µA 61 nC @ 10 V ±30V 2870 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI7N60TU

FQI7N60TU

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
1,000 -

RFQ

FQI7N60TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 1Ohm @ 3.7A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1430 pF @ 25 V - 3.13W (Ta), 142W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB27N25TM-F085

FQB27N25TM-F085

FQB27N25 - N-CHANNEL ULTRAFET 25

Fairchild Semiconductor
5,600 -

RFQ

FQB27N25TM-F085

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 250 V 25.5A (Tc) 10V 131mOhm @ 25.5A, 10V 5V @ 250µA 49 nC @ 10 V ±30V 1800 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDI9406-F085

FDI9406-F085

FDI9406 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
5,600 -

RFQ

FDI9406-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 2.2mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 7710 pF @ 25 V - 176W (Tj) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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