Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76013D3S

HUF76013D3S

MOSFET N-CH 20V 20A TO252AA

Fairchild Semiconductor
3,353 -

RFQ

HUF76013D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 624 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN361AN

FDN361AN

MOSFET N-CH 30V 1.8A SUPERSOT3

Fairchild Semiconductor
3,028 -

RFQ

FDN361AN

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.8A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 220 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFI830BTU

IRFI830BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,333 -

RFQ

IRFI830BTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.25A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1050 pF @ 25 V - 3.13W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP2P25

FQP2P25

MOSFET P-CH 250V 2.3A TO220-3

Fairchild Semiconductor
2,366 -

RFQ

FQP2P25

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 4Ohm @ 1.15A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76419D3

HUF76419D3

MOSFET N-CH 60V 20A IPAK

Fairchild Semiconductor
2,057 -

RFQ

HUF76419D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD5N20LTF

FQD5N20LTF

MOSFET N-CH 200V 3.8A DPAK

Fairchild Semiconductor
3,186 -

RFQ

FQD5N20LTF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 5V, 10V 1.2Ohm @ 1.9A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD3055LESM

RFD3055LESM

MOSFET N-CH 60V 11A TO252AA

Fairchild Semiconductor
3,239 -

RFQ

RFD3055LESM

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 5V 107mOhm @ 8A, 5V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3454DV

SI3454DV

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
3,601 -

RFQ

SI3454DV

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 4.5V, 10V 65mOhm @ 4.2A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 460 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQD24N08TF

FQD24N08TF

MOSFET N-CH 80V 19.6A DPAK

Fairchild Semiconductor
3,981 -

RFQ

FQD24N08TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 19.6A (Tc) 10V 60mOhm @ 9.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 750 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76129S3ST

HUF76129S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,239 -

RFQ

HUF76129S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 16Ohm @ 56A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 1350 pF @ 25 V - 105W (Tc) -40°C ~ 150°C (TJ) Surface Mount
MCH6437-P-TL-E

MCH6437-P-TL-E

MOSFET N-CH 20V 7A MCPH6

Fairchild Semiconductor
3,203 -

RFQ

Bulk - Active - - - 7A (Tj) - - - - - - - - - Surface Mount
HUF75321D3

HUF75321D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor
3,613 -

RFQ

HUF75321D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF5N15

FQPF5N15

MOSFET N-CH 150V 4.2A TO220F

Fairchild Semiconductor
3,542 -

RFQ

FQPF5N15

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4.2A (Tc) 10V 800mOhm @ 2.1A, 10V 4V @ 250µA 7 nC @ 10 V ±25V 230 pF @ 25 V - 32W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF7N10

FQPF7N10

MOSFET N-CH 100V 5.5A TO220F

Fairchild Semiconductor
3,738 -

RFQ

FQPF7N10

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Tc) 10V 350mOhm @ 2.75A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 250 pF @ 25 V - 23W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76609D3S

HUFA76609D3S

MOSFET N-CH 100V 10A TO252AA

Fairchild Semiconductor
2,019 -

RFQ

HUFA76609D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V 3V @ 250µA 16 nC @ 10 V ±16V 425 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB6N25TM

FQB6N25TM

MOSFET N-CH 250V 5.5A D2PAK

Fairchild Semiconductor
3,706 -

RFQ

FQB6N25TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 300 pF @ 25 V - 3.13W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI9426DY

SI9426DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
2,140 -

RFQ

SI9426DY

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 10.5A (Ta) 2.7V, 4.5V 13.5mOhm @ 10.5A, 4.5V 1.5V @ 250µA 60 nC @ 4.5 V ±8V 2150 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SFP9614

SFP9614

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,787 -

RFQ

SFP9614

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 250 V 1.6A (Tc) 10V 4Ohm @ 800mA, 10V 4V @ 250µA - ±30V 295 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS840B

IRFS840B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,267 -

RFQ

IRFS840B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1800 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
SFP9610

SFP9610

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,686 -

RFQ

SFP9610

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 1.75A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 285 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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