Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SFU9024TU

SFU9024TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,721 -

RFQ

SFU9024TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 7.8A (Tc) 10V 280mOhm @ 3.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB13N06LTM

FQB13N06LTM

MOSFET N-CH 60V 13.6A D2PAK

Fairchild Semiconductor
2,468 -

RFQ

FQB13N06LTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF6N25

FQPF6N25

MOSFET N-CH 250V 4A TO220F

Fairchild Semiconductor
2,124 -

RFQ

FQPF6N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4A (Tc) 10V 1Ohm @ 2A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 300 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB2P25TM

FQB2P25TM

MOSFET P-CH 250V 2.3A D2PAK

Fairchild Semiconductor
3,216 -

RFQ

FQB2P25TM

Ficha técnica

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 4Ohm @ 1.15A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP10N20CTSTU

FQP10N20CTSTU

MOSFET N-CH 200V 9.5A TO220-3

Fairchild Semiconductor
3,707 -

RFQ

FQP10N20CTSTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8876

FDP8876

MOSFET N-CH 30V 70A TO220-3

Fairchild Semiconductor
2,888 -

RFQ

FDP8876

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 8.7mOhm @ 40A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1700 pF @ 15 V - 70W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD2N60CTF

FQD2N60CTF

MOSFET N-CH 600V 1.9A DPAK

Fairchild Semiconductor
3,890 -

RFQ

FQD2N60CTF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.9A (Tc) 10V 4.7Ohm @ 950mA, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA76419D3S

HUFA76419D3S

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor
3,269 -

RFQ

HUFA76419D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD20N06TF

FQD20N06TF

MOSFET N-CH 60V 16.8A DPAK

Fairchild Semiconductor
3,694 -

RFQ

FQD20N06TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 16.8A (Tc) 10V 63mOhm @ 8.4A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS520A

IRFS520A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,857 -

RFQ

IRFS520A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Tc) 10V 200mOhm @ 3.6A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76409D3ST

HUFA76409D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET

Fairchild Semiconductor
2,247 -

RFQ

HUFA76409D3ST

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA76419S3ST

HUFA76419S3ST

MOSFET N-CH 60V 29A D2PAK

Fairchild Semiconductor
2,784 -

RFQ

HUFA76419S3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 3V @ 250µA 28 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB10N20CTM

FQB10N20CTM

MOSFET N-CH 200V 9.5A D2PAK

Fairchild Semiconductor
3,802 -

RFQ

FQB10N20CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB2N50TM

FQB2N50TM

MOSFET N-CH 500V 2.1A D2PAK

Fairchild Semiconductor
3,405 -

RFQ

FQB2N50TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 5.3Ohm @ 1.05A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA76429P3

HUFA76429P3

MOSFET N-CH 60V 47A TO220-3

Fairchild Semiconductor
3,621 -

RFQ

HUFA76429P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 4.5V, 10V 22mOhm @ 47A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1480 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF4N90

FQPF4N90

MOSFET N-CH 900V 2.5A TO220F

Fairchild Semiconductor
3,888 -

RFQ

FQPF4N90

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Tc) 10V 3.3Ohm @ 1.25A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75309D3ST_NL

HUF75309D3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,503 -

RFQ

HUF75309D3ST_NL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 70mOhm @ 19A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFW2955TM

SFW2955TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,535 -

RFQ

SFW2955TM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 9.4A (Tc) 10V 300mOhm @ 4.7A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 600 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76432P3

HUF76432P3

MOSFET N-CH 60V 59A TO220-3

Fairchild Semiconductor
2,070 -

RFQ

HUF76432P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFI9630TU

SFI9630TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,348 -

RFQ

SFI9630TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.3A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 956 pF @ 25 V - 3.1W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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