Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDPF16N50UT

FDPF16N50UT

MOSFET N-CH 500V 15A TO220F

Fairchild Semiconductor
1,943 -

RFQ

FDPF16N50UT

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9540

IRF9540

IRF9540 - 19A, 100V, 0.2OHM, P-C

Fairchild Semiconductor
750 -

RFQ

IRF9540

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP8442-F085

FDP8442-F085

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
750 -

RFQ

FDP8442-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 80A (Tc) 10V 3.1mOhm @ 80A, 10V 4V @ 250µA 235 nC @ 10 V ±20V 12200 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB16AN08A0

FDB16AN08A0

MOSFET N-CH 75V 9A/58A D2PAK

Fairchild Semiconductor
6,786 -

RFQ

FDB16AN08A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta), 58A (Tc) 6V, 10V 16mOhm @ 58A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1857 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD5C446NT4G

NTD5C446NT4G

NTD5C446 - SINGLE N-CHANNEL POWE

Fairchild Semiconductor
1,500 -

RFQ

NTD5C446NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 34.3 nC @ 10 V ±20V 2300 pF @ 20 V - 66W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7570S

FDMC7570S

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
4,336 -

RFQ

FDMC7570S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 27A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 27A, 10V 3V @ 1mA 68 nC @ 10 V ±20V 4410 pF @ 13 V - 2.3W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI27N25TU

FQI27N25TU

MOSFET N-CH 250V 25.5A I2PAK

Fairchild Semiconductor
600 -

RFQ

FQI27N25TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 25.5A (Tc) 10V 110mOhm @ 12.75A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP39N20

FDP39N20

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
500 -

RFQ

FDP39N20

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 39A (Tc) 10V 66mOhm @ 19.5A, 10V 5V @ 250µA 49 nC @ 10 V ±30V 2130 pF @ 25 V - 251W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75344P3

HUF75344P3

75A, 55V, 0.008 OHM, N-CHANNEL U

Fairchild Semiconductor
1,425 -

RFQ

HUF75344P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDA16N50-F109

FDA16N50-F109

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
270 -

RFQ

FDA16N50-F109

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDZ375P

FDZ375P

MOSFET P-CH 20V 3.7A 4WLCSP

Fairchild Semiconductor
4,885 -

RFQ

FDZ375P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 1.5V, 4.5V 78mOhm @ 2A, 4.5V 1.2V @ 250µA 15 nC @ 4.5 V ±8V 865 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FCP165N65S3R0

FCP165N65S3R0

FCP165N65S3R0 - POWER MOSFET, N-

Fairchild Semiconductor
2,115 -

RFQ

Bulk SuperFET® III Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 440mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA13N50C-F109

FQA13N50C-F109

MOSFET N-CH 500V 13.5A TO3P

Fairchild Semiconductor
792 -

RFQ

FQA13N50C-F109

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 13.5A (Tc) 10V 480mOhm @ 6.75A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 218W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB8860-F085

FDB8860-F085

FDB8860 - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor
6,400 -

RFQ

FDB8860-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.3mOhm @ 80A, 10V 3V @ 250µA 214 nC @ 10 V ±20V 12585 pF @ 15 V - 254W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB25N33TM-F085

FQB25N33TM-F085

MOSFET N-CH 330V 25A D2PAK

Fairchild Semiconductor
8,000 -

RFQ

FQB25N33TM-F085

Ficha técnica

Bulk Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 330 V 25A (Tc) 10V 230mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 15 V ±30V 2010 pF @ 25 V - 3.1W (Ta), 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF51N25YDTU

FDPF51N25YDTU

MOSFET N-CH 250V 51A TO220F-3

Fairchild Semiconductor
566 -

RFQ

FDPF51N25YDTU

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 51A (Tc) 10V 60mOhm @ 25.5A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 3410 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF22N30

FQPF22N30

MOSFET N-CH 300V 12A TO220F

Fairchild Semiconductor
1,572 -

RFQ

FQPF22N30

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 300 V 12A (Tc) 10V 160mOhm @ 6A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2200 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF17N40T

FQPF17N40T

MOSFET N-CH 400V 9.5A TO220F

Fairchild Semiconductor
642 -

RFQ

FQPF17N40T

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 9.5A (Tc) 10V 270mOhm @ 4.75A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644B-FP001

IRF644B-FP001

IRF644B - DISCRETE MOSFET

Fairchild Semiconductor
980 -

RFQ

IRF644B-FP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 7A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1600 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75631S3ST

HUF75631S3ST

MOSFET N-CH 100V 33A D2PAK

Fairchild Semiconductor
321 -

RFQ

HUF75631S3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 40mOhm @ 33A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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